Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory (ReRAM) devices

Background

Resistive random‑access memory (ReRAM) is a type of memory device which relies on electrochemical processes to control the movement of nanoscale quantities of metal/metal ions across a dielectric/solid electrolyte medium. Key attributes of these devices include low voltage and current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few tens of nm with suitable patterning processes. Recent advances have given more attention to organic and organic‑inorganic hybrid materials as the switching medium because they provide tunable mixed material properties which offer various advantages such as flexibility, simple fabrication process, disposability, biocompatibility, and tunable memory properties. However, despite these advantages, major problems with ReRAM devices include stochasticity in the operating voltages and resistance states, poor reliability, and poor reproducibility. Research seeks to adopt suitable strategies to improve control over the structural, physical, and chemical properties of hybrid switching media to enable high‑performance ReRAM devices with reliable and predictable memory characteristics.

Technology

Researchers at Stony Brook University (SBU) propose a novel organic‑inorganic hybrid resistive switching medium for ReRAM devices featuring composite thin films consisting of organic thin film layer infiltrated with inorganic metal oxide molecules. The nanocomposite thin film can be used as an active layer for resistive ReRAM devices that portray reduced variance in device switching characteristics, controllable switching parameters through adjusting the amount of infiltrated inorganic materials, multi‑level analog switching characteristics for neuromorphic device operation, and lithographic patternability

Advantages

Predictability of device operating voltages - High‑ and low‑resistance operating states - Reduced variance in device switching characteristics - Controllable switching parameters - Improved device reliability (endurance and data retention) - Enhanced reproducibility - Improved size distribution - Multi‑level analog switching characteristics for neuromorphic device operation - Lithographic patternability - Reduced operational power