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Applications of M-plane (1-100) 15R-Silicon Carbide and Related Substrates to Eliminate Defects in Epitaxial films

A method of epitaxial growth of SiC substrates for use in semiconductors and other SiC devices Background: Products can be fabricated using epitaxy; this is a process where a crystalline layer is deposited on a crystalline substrate. Semiconductors can be fabricated through this method. Silicon Carbide (SiC) is a crystalline material existing in various...

Published: 11/22/2023 | Inventor(s): Michael Dudley, Guan Wang, Hui Chen, Yu Zhang

Keywords(s): Other Types of Intellectual Property

Category(s): Campus > Stony Brook University, Technology Classifications > Electronics and Electronic Materials