Integrated TMR-based Current Sensing Solution for Future High Power Density Power Electronics Systems

Background

The transition toward high-frequency power electronics, driven by the adoption of Wide Band Gap semiconductors, necessitates current sensing capabilities that can handle switching speeds in the megahertz range while maintaining high power density. Conventional sensing technologies often lack the necessary bandwidth to accurately capture rapid di/dt and dv/dt transients, leading to inadequate performance in closed-loop control and protection circuits. Furthermore, as operating frequencies increase, parasitic phenomena such as the skin effect and capacitive coupling become more pronounced, distorting measurements and introducing significant electromagnetic interference. Many existing solutions also suffer from thermal instability and bulky footprints, which conflict with the miniaturization goals of modern converters. Consequently, there is a critical need for sensing methods that can provide high-precision, isolated measurements without being compromised by the physical limitations and noise sensitivities inherent in traditional resistive or magnetic sensing architectures.